PART |
Description |
Maker |
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
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IXYS, Corp.
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6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 15A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 100A I(C) TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.4KV V(BR)CEO | 200A I(C) 4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver Bipolar Transistor Modules
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Fuji Electric Co., Ltd.
|
1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C) Power Transistor Module
|
Fuji Electric
|
MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
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TOSHIBA[Toshiba Semiconductor]
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FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
1792D-16BT0LP 1792D-4B0LP 1792D-2B2LP 1792D-4BT4LP |
MODULE 16 OUT MODULE 4 IN 模块4中的 MODULE 4 IN/4 OUT 模块4输入/ 4输出 MODULE 16 IN 模块16 MODULE 2 IN/2 OUT 模块2输入/ 2输出
|
NXP Semiconductors N.V. Stackpole Electronics, Inc.
|
BUT232V03 BUT232V_03 BUT232V |
NPN TRANSISTOR POWER MODULE NPN TRANSISTOR POWER MODULE 140 A, 300 V, NPN, Si, POWER TRANSISTOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
|
CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五(巴西)直| 17.5AI(四 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|
PMEM4020PD PMEM4020PD115 |
PNP transistor/Schottky-diode module; Package: SOT457 (SC-74); Container: Tape reel smd 1300 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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